1 1 M54522FP 8-unit 400ma darlington transistor array with clamp diode sink type 2012.may pin configuration description M54522FP is an eight-circuit darlington transistor arrays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bvceo > 40v) high-current driving (ic(max) = 400ma) with clamping diodes driving available with pmos ic output applications drives of relays and printers, digit drives of indication elements (leds and lamps), and interfaces between microcomputer output and high-current or high-voltage systems function the M54522FP each have eight circuits consisting of npn darlington transistors. this ics have resistance of 20k between input transistor bases and input pins. a spike-killer clamping diode is provided between each output pin (collector) and com pin. the output transistor emitters are all connected to the gnd pin (pin 10). the collector current is 400ma maximum. collector-emitter supply voltage is 40v maximum. package type 20p2n-a 3 4 5 6 7 8 9 10 18 17 16 15 14 13 12 11 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 gnd com common output input circuit diagram com output input 20k 20k 2k gnd the eight circuits share the com and gnd. ?55 +125 storage temperature t stg ?20 +75 operating temperature t opr w 1.10 ta = 25 , when mounted on board power dissipation p d v 40 clamping diode reverse voltage v r ma 400 clamping diode forward current i f v ?0.5 +40 input voltage v i ma 400 current per circuit output, l output current i c v ?0.5 +40 output , h collector-emitter voltage v ceo unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 ) 2 19 o1 in1 1 20 nc nc nc : no connection the diode, indicated with the dotted line, is parasitic, and cannot be used. unit :
8-unit 400ma darlington transistor array with clamp diode sink type M54522FP 2 2012.may note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l r l pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ,v i n = 0 to 8v (2) input-output conditions : r l = 25 , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes v o open i c < 200ma i c < 400ma duty cycle no more than 5% v 0.5 0 ?l? input voltage v il 4 v 30 8 ?h? input voltage v ih 200 0 duty cycle no more than 20% ma 400 0 collector current (current per 1 circuit when 8 circuits are coming on simultaneously) i c v 40 0 output voltage v o max typ min unit limits parameter symbol recommended operating (unless otherwise noted, ta = ?20 ~ +75 ) ? ? 8000 1000 v ce = 4v, i c = 300ma, ta = 25 dc amplification factor h fe a 100 ? ? v r = 40v clamping diode reverse current i r v 2.4 1.5 ? i f = 400ma clamping diode forward voltage v f ma 1.8 0.85 0.3 v i = 17v input current i i 1.6 0.95 ? v i = 4v, i c = 200ma v 2.4 1.15 ? v i = 8v, i c = 400ma collector-emitter saturation voltage v ce(sat) v ? ? 40 i ceo = 100 a collector-emitter breakdown voltage v (br)ceo max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75 * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these values are obtained under any conditions. switching characteristics (unless otherwise noted, ta = 25 ? 930 ? turn-off time t off ? 30 ? c l = 15pf note 1 turn-on time t on max typ min unit limits test conditions parameter symbol
8-unit 400ma darlington transistor array with clamp diode sink type M54522FP 3 2012.may ?the collector current values represent the current per circuit. ?repeated frequency 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 25 typical characteristics thermal derating factor characteristics ambient temperature ta( ) power dissipation pd(w) 0 25 50 75 100 0 0.5 1.0 1.5 output saturation voltage collector current characteristics collector saturation voltage vce(sat)(v) collector current ic(ma) 0 0.5 1.0 1.5 2.0 0 duty-cycle- collector current characteristics duty cycle (%) collector current i c (ma) 0 20 60 80 100 0 100 200 300 40 400 duty-cycle- collector current characteristics duty cycle (%) collector current i c (ma) 0 20 60 80 100 0 100 200 300 40 400 dc amplification factor collector current characteristics collector current i c (ma) dc amplification factor hfe 10 3 10 2 7 5 3 2 10 3 10 1 7 5 3 2 10 0 ta=25 ta=-20 ta=75 v i =4v 100 200 300 400 10 4 7 5 3 2 5 3 2 v ce =4v 7 5 3 2 7 5 3 2 ta=25 ta=-20 ta=75 10 2 collector current i c (ma) grounded emitter transfer characteristics input voltage v i (v) 01234 0 v ce =4v 100 200 300 ta=25 ta=-20 ta=75 ?the collector current values represent the current per circuit. ?repeated frequency 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?ta = 75 2.0 500 500 500 7 400 5 10
8-unit 400ma darlington transistor array with clamp diode sink type M54522FP 4 2012.may clamping diode characteristics forward bias voltage v f (v) forward bias current i f (ma) 0 0.5 1.0 1.5 2.0 0 100 200 300 input characteristics input voltage v i (v) input current i i (ma) 0 5 10 20 25 0 0.5 1.5 ta=25 ta=75 15 1.0 ta=25 ta=-20 ta=75 ta=-20 400 2.0
8-unit 400ma darlington transistor array with clamp diode sink type M54522FP 5 2012.may package outline
8-unit 400ma darlington transistor array with clamp diode sink type M54522FP 6 2012.may ? 2012 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub le may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belong ing to mitsubishi electric corporation or a third party. ?mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ?all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor ho me page (http://www.mitsub ishielectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsib ility for any damage, liability or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mi tsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporati on or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.
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